By Topic

RF-MEMS dielectric charging: Dependence on dielectric film polarization procedures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Papaioannou, G. ; Georgia Inst. of Technol., Atlanta ; Papapolymerou, J. ; Pons, P. ; Plana, R.

The paper demonstrates the advantages arising from the simultaneous assessment of RF-MEMS capacitive switches and MIM capacitors. The application of simple capacitive-voltage characteristics and thermally stimulated depolarization current methods, respectively, allow the discrimination of the contribution of injected charges induced space charge polarization and the dipolar polarization. The proposed method allows the direct determination of device degradation sources and can be used for the dielectric material improvement.

Published in:


Date of Conference:

26-28 Sept. 2007