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MOS Translinear Principle for All Inversion Levels

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1 Author(s)
Bradley A. Minch ; Franklin W. Olin Coll. of Eng., Needham

In this brief, we derive a translinear principle for alternating loops of saturated MOS transistors that is valid at all levels of inversion starting from a simplified version of the Enz-Krummanacher-Vittoz model of the MOS transistor. This generalized translinear principle reduces to the conventional one when all transistors in a translinear loop are biased in weak inversion and it reduces to the voltage-translinear principle when all transistors in the loop are biased in strong inversion. We show experimental measurements from an alternating loop of four nMOS transistors that was fabricated in a 0.5-mum CMOS process through MOSIS to corroborate the generalized translinear principle. Finally, we discuss some potential applications of the principle.

Published in:

IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:55 ,  Issue: 2 )