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Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

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15 Author(s)

Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.

Published in:

IEEE Transactions on Nuclear Science  (Volume:54 ,  Issue: 6 )