By Topic

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Rodbell, K.P. ; IBM T. J. Watson Res. Center, Yorktown Heights ; Heidel, D.F. ; Tang, H.H.K. ; Gordon, M.S.
more authors

Experimental data are presented showing that low energy (<2 MeV) proton irradiation can upset exploratory 65 nm node, silicon-on-insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:54 ,  Issue: 6 )