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Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

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6 Author(s)
Rodbell, K.P. ; IBM T. J. Watson Res. Center, Yorktown Heights ; Heidel, D.F. ; Tang, H.H.K. ; Gordon, M.S.
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Experimental data are presented showing that low energy (<2 MeV) proton irradiation can upset exploratory 65 nm node, silicon-on-insulator circuits. Alpha particle SER data, modeling and simulation results provide a plausible mechanism. This work suggests that track structures need to be understood and effectively modeled, especially for small, modern devices.

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Nuclear Science, IEEE Transactions on  (Volume:54 ,  Issue: 6 )