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The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.