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Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides

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6 Author(s)
M. Porti ; Dept. d'Eng. Electron., Univ. Autonoma de Barcelona, Barcelona ; S. Gerardin ; M. NafrÍa ; X. Aymerich
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We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. In particular, conductive-AFM (C-AFM), scanning capacitance microscopy (SCM), and Kelvin probe force microscopy (KPFM) have been used to measure at the nanoscale level the electrical conduction, capacitance, and contact potential, respectively, of fresh, irradiated, and electrically stressed MOS capacitors. The electrical properties of the different samples have been compared and the impact of the irradiation analyzed.

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IEEE Transactions on Nuclear Science  (Volume:54 ,  Issue: 6 )