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Heavy ion single-event measurements on a variety of high density commercial NAND and NOR flash memories were reported. Three SEE phenomena were investigated: SEUs, SEFIs, and catastrophic loss of ability to erase and write to the device. Although for all devices under test SEUs and SEFIs were observed, these commercial high densities devices appear to be much less susceptible than typical flash devices that have been tested lately. A new high current phenomenon in the high density NAND flash memories and charge pump failure in the NOR flash memory are discussed.