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We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFETs with different strain engineering solutions. Some of the phenomena already present in bulk devices, such as drain current collapse, are still observed alongside some new long-term effects concerning the degradation kinetics under electrical stress. On the other side, early breakdown seems to vanish. SOI degradation after heavy-ion strikes and during following electrical stress is shown to depend on the strain level and strain-inducing technique. We interpreted these results in terms of radiation-induced defects in the gate and isolation oxide.