By Topic

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

We present new results on electrostatic discharges in fully depleted SOI MOSFETs struck by heavy ions. We investigate the sensitivity of irradiated MOSFETs to discharges applied both at the gate and drain terminals. A single heavy-ion strike is shown to reduce the ESD breakdown voltage and enhance the probability of generating source-drain filaments for gate ESD events, while leaving the sensitivity to drain events unchanged. Radiation-induced latent damage in the gate oxide and defects in the silicon body are pointed out as possible reasons for the modified response to electrostatic discharges after irradiation.

Published in:

IEEE Transactions on Nuclear Science  (Volume:54 ,  Issue: 6 )