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Optimizing Radiation Hard by Design SRAM Cells

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6 Author(s)

Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing on 130- and 90-nm transistors and SRAM arrays show that SRAM cells using two-edge transistors, NMOS access transistors, and NMOS reverse-body-bias effectively mitigate TID in both generations. This work experimentally demonstrates that commercial foundry (optimally sized) SRAM cells can be used in radiation hardening by design if NMOS reverse-body bias is used for TID mitigation.

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Nuclear Science, IEEE Transactions on  (Volume:54 ,  Issue: 6 )