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Understanding Radiation- and Hot Carrier-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress

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8 Author(s)
Peng Cheng ; Georgia Inst. of Technol., Atlanta ; Jun, B. ; Sutton, A. ; Appaswamy, A.
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Using mixed-mode annealing to help evaluate the responses of modern bipolar transistors, we compare the damage processes associated with X-ray irradiation-induced and hot carrier-induced damage in SiGe HBTs. Stress and radiation measurements indicate that the by-products of both X-ray irradiation-induced and hot carrier-induced trap reactions are identical. We use calculations to better understand the operative damage mechanisms, and find that a hydrogen reaction-diffusion model can predict the observed characteristics of our measurements. Calculations indicate that the transport of hydrogen molecules inside the emitter-base oxides determines the trap generation and recovery processes.

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Nuclear Science, IEEE Transactions on  (Volume:54 ,  Issue: 6 )