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The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition

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5 Author(s)
Shengwen Yu ; Department of Electronic Information Material, School of Materials Science and Engineering, Shanghai University, No. 149, Yanchang Road, Shanghai 200072, China ; Jinrong Cheng ; Ruxing Li ; Weicheng Zhu
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Ba0.6Sr0.4CrxTi1-xO3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction measurement detected an increasing in lattice parameters which could be due to the characteristic of film growth process. Dielectric properties of the BSCT films were measured. The dissipation factors were decreased in the Cr-doped films. The highest Figure of Merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.

Published in:

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

Date of Conference:

27-31 May 2007