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The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition

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5 Author(s)

Ba0.6Sr0.4CrxTi1-xO3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction measurement detected an increasing in lattice parameters which could be due to the characteristic of film growth process. Dielectric properties of the BSCT films were measured. The dissipation factors were decreased in the Cr-doped films. The highest Figure of Merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.

Published in:

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Date of Conference:

27-31 May 2007