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Fe-doped Ba0.6Sr0.4TiO3 (BST) thin films were prepared on Pt/Si substrates by the pulsed laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films was also reduced by addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88 % at 10 Hz, which is 1.7 % for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
Date of Conference: 27-31 May 2007