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(Bi1/2Na1/2)TiO3 (BNT) thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition (CSD). BNT precursor thin films crystallized in the perovskite BNT phase above 650degC with a random orientation. The synthesized BNT thin films showed typical ferroelectric P-E hysteresis and field-induced strain loops. The Pr and Ec values of the 700degC-annealed BNT thin films were approximately 15 muC/cm and 160 kV/cm, respectively.