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Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode

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10 Author(s)
K. W. Kim ; Nano Device Research Center, Korea Institute of Science & Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea; Department of Electronics and Computer Engineering, Korea University, 5-1 Anam-dong, Sungbuk-gu, Seoul 136-701, Korea ; K. W. Jung ; S. P. Ryu ; N. K. Cho
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We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.

Published in:

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Date of Conference:

26-31 Aug. 2007