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Gate substrate effect on RF CMOS device noise

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4 Author(s)
Xiong, Y.Z. ; Inst. of Microelectron., Singapore ; Shi, J. ; Lan, N. ; Lin, F.

The gate substrate effect on RF CMOS device noise is investigated. The gate substrate resistance (Rgb) noise contribution to the total RF device minimum noise figures (NFmin) is obtained. The results show that the gate substrate resistance noise is considerable in a certain frequency range for 90 nm CMOS devices.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 24 )