By Topic

Design of a 1 Gb Radiation Hardened NAND flash memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Gupta, N. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ ; Vermeire, B. ; Barnaby, H. ; Goksel, M.
more authors

Non-volatile memories used in the space environment typically require radiation hardened process technologies. These technologies are not only costly, but the resultant die occupies more area compared to commercial memories of comparable size. This in turn limits the memory density of these radiation hardened memories. In this paper, we present a technique for the development of a low cost 1 Gb radiation hardened (Rad Hard) NAND flash memory manufactured with commercial components. The design methodology provides an alternate strategy for producing radiation hardened memory while simultaneously achieving higher cell densities at lower costs.

Published in:

Non-Volatile Memory Technology Symposium, 2007. NVMTS '07

Date of Conference:

10-13 Nov. 2007