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This paper describes a flexible thin-film transistor (TFT) fabricated on a standard transparency fdm. The carrier transport layer of this TFT is a high-density ultrapure carbon nanotube (CNT) film formed by using an electronic-grade CNT solution from Brewer Science, Inc. This CINT-TFT demonstrates a high field-effect mobility of ~ 48,000 cm2/Vs and a large current-carrying capacity of > 35 mA. Such a device would become a critical building block of next-generation low-cost large-area high-speed flexible electronics.
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE (Volume:1 )
Date of Conference: 22-25 Oct. 2006