Referenced Items are not available for this document.
In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and <100>-oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60 nm) flash cell. Reduced interface trap with the active edge of <100> channel resulted in the endurance characteristic improvement ~5%.
Published in:
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
(Volume:1
)
Date of Conference: 22-25 Oct. 2006
- Page(s):
- 210 - 211
- E-ISBN :
- 978-1-4244-0541-1
- Print ISBN:
- 978-1-4244-0540-4
- INSPEC Accession Number:
- 10017896
- Conference Location :
- Gyeongju
- Digital Object Identifier :
- 10.1109/NMDC.2006.4388843
- Product Type:
- Conference Publications
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