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In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and <100>-oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60 nm) flash cell. Reduced interface trap with the active edge of <100> channel resulted in the endurance characteristic improvement ~5%.
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE (Volume:1 )
Date of Conference: 22-25 Oct. 2006