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Random network transistors of carbon nanotubes directly grown on glass substrate

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4 Author(s)
Eun Ju Bae ; Materials and Devices Research Center, Samsung Advanced Institute of Technology, Yong-In, Kyeongki-Do, 449-712, Korea ; Yo-Sep Min ; Un Jeong Kim ; Wanjun Park

We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/ mum2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.

Published in:

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE  (Volume:1 )

Date of Conference:

22-25 Oct. 2006