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We report a transistor of randomly networked single-walled carbon nanotubes (SWNTs) grown on glass by using water plasma CVD. The density of the nanotube on pre-patterned region was more than 50/ mum2 which is much larger than the percolation threshold. The nanotube network transistors were fabricated with Al2O3 for the gate oxide and a conducting and transparent ZnO for the back-gate. These nanotube active devices may be fitted to thin film transistor applications for future opto-electronics.