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Capacitance-voltage characteristics of MOS capacitors with Ge anaocrystals embedded in HfO2 gate material

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4 Author(s)
Hye-Ryoung Lee ; Dept. of Electr. Eng. & Inst. for Nano Sci., Korea Univ., Seoul ; Samjong Choi ; Kyoungah Cho ; Sangsig Kim

Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2-and NH3-annealed HfO2 films are analyzed.

Published in:

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE  (Volume:1 )

Date of Conference:

22-25 Oct. 2006

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