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Development of molecular logic array and memory device

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5 Author(s)
Lee, Hyoyoung ; Convergence Technol. Res. Div., Daejeon ; Gyeong Sook Bang ; Choi, Nak-Jin ; Junghyun Lee
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For the realization of high density logic and memory device in nanotechnology field, many researchers have applied functional organic rectifying molecules for molecular logic gate and switching molecules for molecular memory device by using self-assembled monolayers (SAMs). We have been worked on a development of 3 x 3 molecular AND/OR logic gates. To implement the molecular logic gates, we synthesized rectifying molecules having high rectification ratio and fabricated 3 x 3 array device with 9 nano-pores whose diameter is about 100 nm. Finally, we can successfully implement the AND/OR logic gates. In addition, we have worked on a fabrication of molecular memory device. To implement single organic monolayer device in the vertical structure of metal-molecule-metal electrode, it is required to solve fundamental problems, that is, an electrical short. A yield of the molecular device using self assembled single monolayer, is less than 5 % even in nano-pore device. For the realization of molecular memory device using single monolayer, we introduce new way by using organic conducting electrode. The yield of the newly developed molecular device is 50-60%, which is improved over 10 times. Furthermore, we like to report a device fabrication by using a nano-imprinting lithography technique.

Published in:

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE  (Volume:1 )

Date of Conference:

22-25 Oct. 2006