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p-Si Microprobe Arrays Grown at Low Temperature by Selective VLS Using In-Situ Doping and Their Properties

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4 Author(s)
Islam, M.S. ; Toyohashi Univ. of Technol., Toyohashi ; Kawashima, T. ; Sawada, K. ; Ishida, M.

This paper reports the high-yield growth of p-Si microprobe arrays at low temperature by using Au-catalyzed selective vapor-liquid-solid (VLS) growth using in-situ doping VLS growth using Si2H6 only gives intrinsic Si microprobes, which could be doped by diffusion process (at 1100degC) after VLS growth. But in this work we have demonstrated that by incorporating in-situ doping using the gas source of Si2H6 and B2H6 with VLS growth process, doped p-Si microprobes can be realized directly at a temperature (700degC or less) lower than that required at diffusion process. The effects of boron doping on the physical and electrical properties of these p-Si microprobes have been investigated in detail.

Published in:

Sensors, 2007 IEEE

Date of Conference:

28-31 Oct. 2007