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Electrical characteristics of organic ferroelectric FET integrated with Si using P(VDF-TrFE) copolymer films for nonvolatile memory devices

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3 Author(s)
Sang-Hyun Lim ; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Amherst, MA 01003 U.S.A. sanghyun@engin.umass.edu ; Alok C. Rastogi ; Seshu B. Desu

The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO2 buffer has been demonstrated. Measurement of channel current IDS shows no saturation due to uniform ferroelectric field across gate channel. Modulation of channel conductance is attributed to sensitively switchable polarization field. Remarkable switching drain current ratio of >105 times with ON/OFF operations were obtained. Memory window is obtained to show the polarization field regulating threshold voltages of the integrated organic polymer FET.

Published in:

2006 15th ieee international symposium on the applications of ferroelectrics

Date of Conference:

July 30 2006-Aug. 3 2006