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Direct-Write Deposition of PZT Thick Films Derived from Modified Sol-Gel Process

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6 Author(s)
J. Sun ; Department of Materials Science & Engineering, Rutgers University, 607 Taylor Road, Piscataway, NJ, 08854 ; M. Vittadello ; E. K. Akdogan ; A. Hall
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Lead zirconate titanate (PZT) thick films (6-70 mum) have been deposited on platinum coated alumina and silicon substrates using Micropentrade direct-write technique. Feedstock materials for Micropen deposition have been prepared by a modified sol-gel process in which different amounts of commercial PZT powder (15, 20, 25, 30 vol%) were dispersed in a stable PZT sol to achieve low temperature heat treatment conditions (700degC). The effects of the substrate, intermediate sol layer, film thickness, PZT content, and Micropen parameters on the resulting multi-layer PZT films have been investigated. The films using 15 vol% paste on Pt/Si substrate showed dielectric constant in the range 540-870, dielectric loss between 4.1 and 4.5 % at 1 kHz, remanent polarization (Pr) of 7-12 muC/cm2, and coercive field (Ec) of 24-30 kV/cm.

Published in:

2006 15th ieee international symposium on the applications of ferroelectrics

Date of Conference:

July 30 2006-Aug. 3 2006