Cart (Loading....) | Create Account
Close category search window
 

Ka-Band SiGe HBT Low Noise Amplifier Design for Simultaneous Noise and Input Power Matching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Byung-Wook Min ; Michigan Univ., Ann Arbor ; Rebeiz, G.M.

This letter presents the design and implementation of a Ka-band low noise amplifier (LNA). The LNA is based on a cascode amplifier using 0.12 mum SiGe heterojunction bipolar transistors (HBT). A new design procedure for simultaneous noise and input power matching is developed considering the collector-base feedback capacitance . At 33-34 GHz, the LNA results in a measured gain of 23.5 dB, a return loss of <-20 dB and a noise figure (NF) of 2.9 dB. The input return loss is <-10 dB and the NF is 2.6-3.2 dB for the entire Ka-band frequency range. The LNA is 300times300 mum2, consuming 6 mA from 1.8 V supply (11 mW). The output 1 dB compression power is -6 dBm. To our knowledge, these are state-of-the-art results and show the validity of the design technique.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:17 ,  Issue: 12 )

Date of Publication:

Dec. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.