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Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34

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3 Author(s)
J. G. Champlain ; Naval Res. Lab., Washington ; R. Magno ; J. B. Boos

Unannealed Ti/Pt/Au contacts to n-type lnAs0.66Sb0.34 were fabricated and measured. Extremely low specific contact resistances down to 2.4 times 10-8 Omega cm2 were measured, commensurate with In0.53Ga0.47As, InAs, and In0.27Ga0.73Sb contact schemes with higher doping, which is due to the very high electron mobility in rnAs0.66Sh0.34 and hypothesised pinning of the surface Fermi level within the conduction band.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 23 )