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Source-drain follower for monolithically integrated sensor array

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3 Author(s)
Nakazato, K. ; Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ., Nagoya ; Ohura, M. ; Uno, S.

A source-drain follower has been designed and implemented in 1.2 mum standard CMOS technology. The circuit acts as a voltage follower, in which a sensing transistor is operated at fixed gate-source and gate-drain voltages, and operates at 10 nW with 10 mV accuracy in a 24 times 65 mum active area.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 23 )