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In the present paper it will be shown that RTP combined with laser irradiation parallel to the wafer surface yields an optimum control of chemical reactions. The technique will be discussed and results regarding the surface preparation of silicon wafers as well as the deposition of atomically controlled layers for nanoelectronics will be presented. Examples are the removal of carbon containing residuals with oxygen, and the removal of the native silicon oxide with germane at temperatures of 600degC. Besides surface preparation it will also be shown that laser assisted epitaxial processes at ultra low temperatures are possible.