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Aiming for the Best Matching Between Ultra-Shallow Doping and Milli-To Femto-Second Activation

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2 Author(s)
Mizuno, B. ; Ultimate Junction Technol. Inc., Moriguchi ; Sasaki, Y.

Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.

Published in:

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on

Date of Conference:

2-5 Oct. 2007

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