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An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications

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2 Author(s)
Lifang Lou ; Univ. of Central Florida, Orlando ; Liou, J.J.

A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mum to provide robust ESD-protection solutions.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 12 )