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High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

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6 Author(s)
Lew, K.L. ; Nanyang Technol. Univ., Singapore ; Yoon, S.F. ; Wang, H. ; Wicaksono, S.
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AlGaAs/GaAsNSb heterojunction bipolar transistors (HBTs) with low turn-on voltage have been fabricated. The turn-on voltage of the device fabricated from an as-grown sample is ~180 mV lower than that of a conventional AlGaAs/GaAs HBT. The effect of rapid thermal annealing on device performance is an increase in the gain from ~8.5 to ~20. However, the knee voltage of the annealed sample (~3 V), as well as the turn-on voltage, is also higher compared with that of the as-grown sample (~1.5 V).

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 12 )

Date of Publication:

Dec. 2007

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