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We have demonstrated n-channel gallium nitride (GaN) MOSFETs using a selective area growth (SAG) technique and ion implantation on a silicon substrate. Both MOSFETs realized good normally off operations. The MOSFET using the SAG technique showed a large drain current of 112 mA/mm, a lower leakage current, and a high field mobility of 113 cm2/V . s, which is, to our knowledge, the best for a GaN MOSFET on a silicon substrate.
Date of Publication: Dec. 2007