Referenced Items are not available for this document.
We have demonstrated n-channel gallium nitride (GaN) MOSFETs using a selective area growth (SAG) technique and ion implantation on a silicon substrate. Both MOSFETs realized good normally off operations. The MOSFET using the SAG technique showed a large drain current of 112 mA/mm, a lower leakage current, and a high field mobility of 113 cm2/V . s, which is, to our knowledge, the best for a GaN MOSFET on a silicon substrate.
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
12
)
Date of Publication: Dec. 2007
- Page(s):
- 1077 - 1079
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9671811
- Digital Object Identifier :
- 10.1109/LED.2007.909978
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 November 2007
- Issue Date :
- Dec. 2007
- Sponsored by :
- IEEE Electron Devices Society
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