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High-speed chip-to-chip interconnect utilizing flex-circuit technology is investigated for extending the lifetime of copper-based system-level channels. Proper construction of the flex ribbon is shown to improve the raw bandwidth over standard FR-4 boards by about three times. Active testing results from a 130-nm CMOS test vehicle show the potential of up to two times higher data rates. The next-generation test vehicle with 90-nm CMOS circuits gives improved voltage and timing margins at 20 Gb/s. In an interconnect limited case a channel with 36 in (91.4 cm) of flex runs at 18.2 Gb/s data rate at a bit-error ratio (BER) of better than 10-12. The channel includes two 90-nm CMOS test chips, two organic flip-chip package substrates, and two flex connectors; crosstalk is not included in this experiment. High-speed connector solutions, including results from a ldquosplit socketrdquo assembly test vehicle, are discussed in detail. The characterization of two top-side flex connector prototypes demonstrates their basic durability and good high-frequency performance. Samples survive 100 mating cycles at an average contact resistance of less than 30 mOmega, adequate for high-speed signaling. Measured differential insertion loss is less than 1.5 dB up to 10 GHz and less than 3.5 dB up to 20 GHz. Near-end and far-end crosstalk measurements indicate that the connectors exceed crosstalk specifications.