By Topic

Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Alessandro Pecchia ; Nat. Res. Council-National Inst. for the Phys. of the Matter (CNR-INFM), Rome, Italy ; Luigi Salamandra ; Luca Latessa ; BÁlint Aradi
more authors

We report atomistic simulations of the transport properties of Si-nanowire (SiNW) field-effect transistors. Results have been obtained within a self-consistent approach based on the nonequilibrium Green's function (NEGF) scheme in the density functional theory framework. We analyze in detail the operation of an ultrascaled SiNW channel device and study the characteristics and transfer characteristics behavior of the device while varying several parameters including doping, gate and oxide lengths, and temperature. We focus our attention to the quantum capacitance of the SiNW and show that a well-tempered device design can be accomplished in this regime by choosing suitable doping profiles and gate contact parameters.

Published in:

IEEE Transactions on Electron Devices  (Volume:54 ,  Issue: 12 )