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This paper presents a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This model is valid for CNFET with a wide range of chiralities and diameters and for CNFET with either metallic or semiconducting carbon-nanotube (CNT) conducting channel. The modeled nonidealities include the quantum confinement effects on both circumferential and axial directions, the acoustical/optical phonon scattering in the channel region, and the screening effect by the parallel CNTs for CNFET with multiple CNTs. In order to be compatible with both large-(digital) and small-signal (analog) applications, a complete transcapacitance network is implemented to deliver the real-time dynamic response. This model is implemented with an HSPICE. Using this model, we project a 13 times CV/I improvement of the intrinsic CNFET with (19, 0) CNT over the bulk n-type MOSFET at the 32-nm node. The model described in this paper serves as a starting point toward the complete CNFET-device model incorporating the additional device/circuit-level non-idealities and multiple CNTs reported in the paper of Deng and Wong.