Cart (Loading....) | Create Account
Close category search window

A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jie Deng ; Stanford Univ., Stanford ; Wong, H.-S.P.

This paper presents a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This model is valid for CNFET with a wide range of chiralities and diameters and for CNFET with either metallic or semiconducting carbon-nanotube (CNT) conducting channel. The modeled nonidealities include the quantum confinement effects on both circumferential and axial directions, the acoustical/optical phonon scattering in the channel region, and the screening effect by the parallel CNTs for CNFET with multiple CNTs. In order to be compatible with both large-(digital) and small-signal (analog) applications, a complete transcapacitance network is implemented to deliver the real-time dynamic response. This model is implemented with an HSPICE. Using this model, we project a 13 times CV/I improvement of the intrinsic CNFET with (19, 0) CNT over the bulk n-type MOSFET at the 32-nm node. The model described in this paper serves as a starting point toward the complete CNFET-device model incorporating the additional device/circuit-level non-idealities and multiple CNTs reported in the paper of Deng and Wong.

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 12 )

Date of Publication:

Dec. 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.