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Strain Compensated InGaAs/GaAsP Single Quantum Well Thin Film Lasers Integrated onto Si Substrates

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7 Author(s)
Sang-Yeon Cho ; ECE Dept. Duke University, Durham NC 27708. Email: sangyeon.cho@duke.edu ; Sabarni Palit ; Dapeng Xu ; Gene Tsvid
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Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.

Published in:

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference:

21-25 Oct. 2007