Referenced Items are not available for this document.
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.
Published in:
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Date of Conference: 21-25 Oct. 2007
- Page(s):
- 829 - 830
- ISSN :
- 1092-8081
- E-ISBN :
- 978-1-4244-0925-9
- Print ISBN:
- 978-1-4244-0925-9
- INSPEC Accession Number:
- 9858651
- Conference Location :
- Lake Buena Vista, FL
- Digital Object Identifier :
- 10.1109/LEOS.2007.4382664
- Product Type:
- Conference Publications
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