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Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

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5 Author(s)
Joyce, H.J. ; Australian Nat. Univ., Canberra ; Qiang Gao ; Kim, Yong ; Tan, H.H.
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This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.

Published in:

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference:

21-25 Oct. 2007

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