Cart (Loading....) | Create Account
Close category search window

Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Joyce, H.J. ; Australian Nat. Univ., Canberra ; Qiang Gao ; Kim, Yong ; Tan, H.H.
more authors

This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.

Published in:

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference:

21-25 Oct. 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.