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Room-Temperature Direct Bonding for Integrated Optical Devices

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3 Author(s)
Takei, R. ; Tokyo Inst. of Technol., Tokyo ; Abe, K. ; Mizumoto, T.

We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.

Published in:

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference:

21-25 Oct. 2007