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Type II Strain Layer Superlattices (SLS's) grown on GaAs Substrates

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9 Author(s)
Sharma, Y.D. ; Univ. of New Mexico, Albuquerque ; Bishop, G. ; Kim, H.S. ; Rodriguez, J.B.
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We report on type-II SLS's photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial- misfit-approach, which relieves the strain though 90 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.

Published in:

Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference:

21-25 Oct. 2007