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Type II Strain Layer Superlattices (SLS's) grown on GaAs Substrates

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9 Author(s)
Sharma, Y.D. ; Univ. of New Mexico, Albuquerque ; Bishop, G. ; Kim, H.S. ; Rodriguez, J.B.
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We report on type-II SLS's photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial- misfit-approach, which relieves the strain though 90 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.

Published in:
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE

Date of Conference: 21-25 Oct. 2007

Page(s):
96 - 97
ISSN :
1092-8081
E-ISBN :
978-1-4244-0925-9
Print ISBN:
978-1-4244-0925-9
INSPEC Accession Number:
9858291
Conference Location :
Lake Buena Vista, FL
Digital Object Identifier :
10.1109/LEOS.2007.4382293
Product Type:
Conference Publications

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