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An intrinsic base resistance model for low and high currents

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2 Author(s)
Jo, M. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Burk, D.E.

A highly physical model of the intrinsic base resistance for a bipolar junction transistor, which includes emitter crowding, base pushout, and conductivity modulation and is compatible with the charge-based large-signal bipolar transistor model, is presented. This model, which is an extension of the Hauser model, is derived from a power dissipation calculation and verified with PISCES simulations of the low- to high-current region. It is then implemented in SLICE for CAD

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 1 )