By Topic

An analytical model for the determination of the transient response of CML and ECL gates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ghannam, Moustafa Y. ; Interuniv. Microelectron. Center, Leuven, Belgium ; Mertens, R.P. ; Van Overstraeten, R.J.

In the analysis, the full-range transient response of the gate is calculated using closed-form analytical expressions. This is achieved by generalizing and improving the method used by J.M.C. Stork (IEDM Tech. Dig., p.550, 1988) for the determination of the propagation delay. The proposed model is applicable at low-level injection, unity fan-in, and unity fan-out. The delays related to the transit time, the load, and the junction capacitances are considered. For ECL gates, the emitter follower delay is also included. Various delays (risetime, propagation delay, etc.) calculated using the proposed model agree perfectly with the results of SPICE computer simulations and with the reported experimental values

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 1 )