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A Fully Integrated 4 × 10-Gb/s DWDM Optoelectronic Transceiver Implemented in a Standard 0.13 μm CMOS SOI Technology

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15 Author(s)

Optical and electronic building blocks required for DWDM transceivers have been integrated in a 0.13 mum CMOS SOI technology. Using these building blocks, a 4 x 10-Gb/s single-chip DWDM optoelectronic transceiver with 200 GHz channel spacing has been demonstrated. The DWDM transceiver demonstrates an unprecedented level of optoelectronic system integration, bringing all required optical and electronic transceiver functions together on a single SOI substrate. An aggregate data rate of 40 Gb/s was achieved over a single fiber, with a BER of less than 10-12 and a power consumption of 3.5 W.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 12 )