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A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD's

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7 Author(s)
Fujii, Eiji ; Matsushita Electron. Corp., Osaka, Japan ; Senda, K. ; Emoto, F. ; Yamamoto, Atsuya
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The laser-recrystallization technique utilizes the connected-island structure for forming recrystallized silicon films with enlarged grain size controlled by the thermal gradient. This technique has been used to fabricate the driver circuits of small-size monolithic active-matrix liquid-crystal displays. A horizontal driver circuit with partially recrystallized silicon thin-film transistors (TFTs) has been successfully fabricated on quartz substrates, together with a vertical driver and active-matrix TFT circuits. The operating frequency of the fabricated horizontal driver circuits can be as high as 10 MHz under a clock voltage of 5 V

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 1 )