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Self-organized In(Ga)As/Ga(Al)As quantum dots have emerged as useful nanostructures that can be epitaxially grown and incorporated in the active region of devices. The near pyramidal dots exhibit properties arising from the three-dimensional quantum confinement and from the coherent built-in strain. The properties and current state-of-the-art characteristics of quantum-dot junction lasers, intersublevel infrared detectors, optical amplifiers, and microcavity devices are briefly reviewed. It is evident that self-organized quantum-dot optoelectronic devices demonstrate properties that are sometimes unique and often surpass the characteristics of existing devices.