Cart (Loading....) | Create Account
Close category search window
 

Germanium p-channel MOSFET's with high channel mobility, transconductance, and k-value

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Martin, S.C. ; Div. of Eng., Brown Univ., Providence, RI, USA ; Hitt, L.M. ; Rosenberg, J.J.

Summary form only given. The authors report p-channel germanium MOSFETs which exhibit channel mobilities more than four times higher than typically obtained in p-channel silicon devices (in excess of 1000 cm2/V-s with a gate dielectric thickness of approximately 220 AA). Fabrication of these MOSFETs is quite straightforward and utilizes equipment which is comparable to that used for conventional silicon MOSFET processing. Germanium p-channel MOSFETs having effective channel lengths down to approximately 2.3 mu m (2.75- mu m gate length) have been fabricated. Using a dielectric capacitance of 2.5*10-7 F-cm-2 taken from large area devices, a mobility of approximately 1050 cm2/V-s can be inferred from the slope of the transconductance curve. For the 2.3- mu m device, a transconductance of 50 mS/mm at approximately 0.5 V above threshold and a k-value of 110 mS/V-mm have been obtained. This performance is significantly better than that of p-channel silicon devices having similar channel length and approximately 220-AA gate dielectric thickness.

Published in:

Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )

Date of Publication:

Nov 1989

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.