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Summary form only given, as follows. Room-temperature continuous-wave oscillation with emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5- mu m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a metal-DBR hybrid reflector grown by MBE. The threshold current is 50 mA for a 15- mu m-diameter device. Th temperature dependence of the threshold current gives T0=115 K.