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Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy

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5 Author(s)
Tai, K. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Seabury, C.W. ; Ota, Y. ; Deppe, D.G.
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Summary form only given, as follows. Room-temperature continuous-wave oscillation with emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5- mu m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a metal-DBR hybrid reflector grown by MBE. The threshold current is 50 mA for a 15- mu m-diameter device. Th temperature dependence of the threshold current gives T0=115 K.

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 11 )