By Topic

1.54 lm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)

A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous IMF formation and anti-phase domain suppression. The 1 mm times 100 mum GaSb QW laser diode operates under pulsed conditions at 77 K with a threshold current density of 2 kA/cm2 and a maximum peak power of ~20 mW. Furthermore, the device is characterised by a 9.1 Omega forward resistance and a leakage current density of 0.7 A/cm2 at -5 V.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 22 )