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Hydrogen sensing performance of Pt-oxide-GaN Schottky diode

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6 Author(s)
Tsai, Y.Y. ; Nat. Cheng-Kung Univ., Tainan ; Lin, K.W. ; Chen, H.I. ; Hung, C.W.
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An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H2/air gas is observed under a forward voltage of 0.2 V. Under an inert environment (N2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 22 )