Skip to Main Content
Summary form only given. The authors present a novel theoretical and experimental approach using independent static, dynamic, and transient measurements to analyze the double interfaces and volume trapping properties of SOI (silicon-on-insulator) materials. In particular, they develop a generalized model appropriate for the study of interfaces, bulk traps, and buried oxide properties using the inherent semiconductor-insulator-semiconductor (SIS) capacitor structure of the unprocessed SOI substrate. The model is based on the extension of conventional MOS capacitor theory to the two Si-SiO2 interfaces of the SIS capacitor. The validity of the model is demonstrated by independent static, dynamic, and transient measurements on the SIMOX (separation by implantation of oxygen) based SIS capacitors. The results of this study reveal that the substrate-oxide interface has fewer electrically active defects than the film-oxide interface.